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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1352
DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80(Min) *Good Linearity of hFE *Complement to Type 2SB989
APPLICATIONS *Designed for general purpose application
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
IE
Emitter Current-Continuous
-4
A
IB
B
Base Current-Continuous
0.4
A
PC
Collector Power Dissipation@ TC=25
30
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain--Bandwidth Product CONDITIONS IC= 50mA; IB= 0 IE= 10mA; IC= 0 IC= 3A; IB= 0.3A
B
2SD1352
MIN 80 5
TYP.
MAX
UNIT V V
0.45 1.0
1.5 1.5 30 0.1
V V A
IC= 3A ; VCE= 5V VCB= 80V; IE= 0 VEB= 5V; IC= 0 IC= 0.5A ; VCE= 5V IC= 3A ; VCE= 5V IE= 0; VCB= 10V; ftest= 1MHz IC= 0.5A ; VCE= 5V 3 40 15
mA
240 50 90 8 pF MHz
hFE-1 Classifications R 40-80 O 70-140 Y 120-240
isc Websitewww.iscsemi.cn
2


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