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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1352 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80(Min) *Good Linearity of hFE *Complement to Type 2SB989 APPLICATIONS *Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IE Emitter Current-Continuous -4 A IB B Base Current-Continuous 0.4 A PC Collector Power Dissipation@ TC=25 30 W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain--Bandwidth Product CONDITIONS IC= 50mA; IB= 0 IE= 10mA; IC= 0 IC= 3A; IB= 0.3A B 2SD1352 MIN 80 5 TYP. MAX UNIT V V 0.45 1.0 1.5 1.5 30 0.1 V V A IC= 3A ; VCE= 5V VCB= 80V; IE= 0 VEB= 5V; IC= 0 IC= 0.5A ; VCE= 5V IC= 3A ; VCE= 5V IE= 0; VCB= 10V; ftest= 1MHz IC= 0.5A ; VCE= 5V 3 40 15 mA 240 50 90 8 pF MHz hFE-1 Classifications R 40-80 O 70-140 Y 120-240 isc Websitewww.iscsemi.cn 2 |
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